| PART |
Description |
Maker |
| APT10030L2VFR |
POWER MOS V 1000V 33A 0.300 Ohm
|
Advanced Power Technology
|
| APT10030L2VR |
POWER MOS V 1000V 33A 0.300 Ohm
|
Advanced Power Technology
|
| APT30M70BVFR |
POWER MOS V 300V 48A 0.070 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT30M85 APT30M85BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 300V 40A 0.085 Ohm
|
Advanced Power Technology, Ltd.
|
| APT30M61BLL APT30M61SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 300V 54A 0.061 Ohm
|
Advanced Power Technology Ltd.
|
| APT60M90JN |
POWER MOS IV 600V 57A 0.090 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| HUF75307D3 HUF75307D3S HUF75307P3 |
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
|
Intersil, Corp.
Intersil Corporation
|
| STS4PF20V |
P-CHANNEL 20V - 0.090 OHM - 4A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFET
|
SGS Thomson Microelectronics
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| APT30M36B2LL APT30M36LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 300V 84A 0.036 Ohm
|
Advanced Power Technology Ltd.
|
